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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

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8 Author(s)
Chen, Z. ; Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208 ; Qhalid Fareed, R.S. ; Gaevski, M. ; Adivarahan, V.
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The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4–10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 8 )

Date of Publication:

Aug 2006

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