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Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

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4 Author(s)
Lim, Ji-Song ; Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 ; Yang, Xiaodong ; Nishida, Toshikazu ; Thompson, S.E.

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An experimental method to determine both the hydrostatic and shear deformation potential constants is introduced. The technique is based on the change in the gate tunneling currents of Si-metal oxide semiconductor field effect transistors (MOSFETs) under externally applied mechanical stress and has been applied to industrial n-type MOSFETs. The conduction band hydrostatic and shear deformation potential constants (Ξd and Ξu) are extracted to be 1.0±0.1 and 9.6±1.0 eV, respectively, which is consistent with recent theoretical works.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 7 )

Date of Publication:

Aug 2006

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