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Nitride-based high electron mobility transistors with a GaN spacer

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10 Author(s)
Palacios, T. ; Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 ; Shen, L. ; Keller, S. ; Chakraborty, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2335514 

A GaN/ultrathin AlN/GaN heterojunction has been used to introduce a GaN spacer between the GaN channel and the AlGaN barrier in AlGaN/GaN high electron mobility transistors (HEMTs). In conventional AlGaN/GaN devices, the alloy scattering of the electrons with the AlGaN barrier degrades the electron velocity at high electric fields. This effect is significantly reduced in GaN-spacer transistors, which therefore have much better high field transport properties. While the dc performance of these transistors is similar to conventional AlGaN/GaN HEMTs, a 20% increase in the electron velocity has been measured by two different techniques.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 7 )

Date of Publication:

Aug 2006

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