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Flexible ferroelectret field-effect transistor for large-area sensor skins and microphones

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7 Author(s)
Graz, I. ; Soft-Matter Physics, Johannes Kepler University, Altenberger Str. 69, A-4040 Linz, Austria ; Kaltenbrunner, Martin ; Keplinger, Christoph ; Schwodiauer, R.
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Ferroelectrets generate an electric field large enough to modulate the conductance of the source-drain channel of a thin-film field-effect transistor. Integrating a ferroelectret with a thin-film transistor produces a ferroelectret field-effect transistor. The authors made such transistors by laminating cellular polypropylene films and amorphous silicon thin-film transistors on polyimide substrates. They show that these ferrroelectret field-effect transistors respond in a static capacitive or dynamic piezoelectric mode. A touch sensor, a pressure-activated switch, and a microphone are demonstrated. The structure can be scaled up to large-area flexible transducer arrays, such as roll-up steerable compliant sensor skin.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 7 )

Date of Publication:

Aug 2006

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