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p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

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13 Author(s)
Liu, H.Y. ; Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom ; Liew, S.L. ; Badcock, T. ; Mowbray, D.J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2336998 

A modification of the thickness of the low-growth-temperature component of the GaAs spacer layers in multilayer 1.3 μm InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 7 )

Date of Publication:

Aug 2006

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