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Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

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6 Author(s)
Wang, P. ; Department of Engineering, The University of Liverpool, Liverpool L69 3GH, United Kingdom and SuperSTEM Laboratory, CLRC Daresbury, Daresbury WA4 4AD, United Kingdom ; Bleloch, A.L. ; Falke, M. ; Goodhew, P.J.
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The authors present a direct method to quantitatively measure the indium composition of buried InAs quantum dots embedded in a GaAs matrix. In this method, spatially resolved electron-energy-loss spectroscopy combined with aberration-corrected scanning transmission electron microscopy at atomic resolution was employed to measure compositional profiles across the center of a quantum dot and the adjacent wetting layer. The size and shape of the quantum dots were determined using the Z contrast in high angle annular dark field images. A substantial enrichment in indium at the top of the quantum dots was identified, which is consistent with theoretical predictions.

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Applied Physics Letters  (Volume:89 ,  Issue: 7 )