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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:7 Help

Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors

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5 Author(s)
Wang, Zhengliang ; State Key Laboratory of Optoelectronic Materials and Technologies, Ministry of Education Key Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, People’s Republic of China ; Hongbin Liang ; Wang, Jing ; Gong, Menglian
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Phosphors Na5La(MoO4)4:xEu3+ and NaEu(MoO4)2 were prepared with a solid-state reaction technique. Their photoluminescent properties were investigated at room temperature. Bright red-light-emitting diodes were fabricated by coating the phosphors onto near-ultraviolet/violet-emitting InGaN chips, respectively. The diodes prepared with phosphor Na5Eu(MoO4)4 show appropriate CIE chromaticity coordinates (x=0.65,y=0.34) and exhibit more intensive red emission than that prepared with NaEu(MoO4)2, indicating that Na5Eu(MoO4)4 may be applied as an excellent red component for near-ultraviolet InGaN-based white diodes.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 7 )

Date of Publication: Aug 2006

Page(s):
071921 - 071921-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2335579
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 2006

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