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Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency

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5 Author(s)
Kim, Baek-Hyun ; Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Cho, Chang-Hee ; Park, Seong-Ju ; Park, Nae-Man
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The effect of Ni/Au metal contact on the carrier injection and the electroluminescence of silicon quantum dot light-emitting diodes (LEDs) was investigated. An LED with an annealed Ni/Au contact at 400 °C in air showed a lower threshold voltage compared to that of an as-deposited Ni/Au contact by forming a nickel silicide, which has a lower work function than Ni at the interface between metal layers and silicon nitride. The optical output power of the LED with the annealed Ni/Au contact was also increased due to a highly transparent NiO layer and a lowly resistant Au layer.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 6 )