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High-mobility amorphous In2O3–10 wt %ZnO thin film transistors

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4 Author(s)
Yaglioglu, B. ; Division of Engineering, Box D, Brown University, Providence, Rhode Island 02912 ; Yeom, H.Y. ; Beresford, R. ; Paine, D.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2335372 

The authors report on the fabrication and characterization of thin film transistors that use sputter deposited amorphous indium zinc oxide both for the channel and source-drain metallizations in a gate-down configuration. The channel and source-drain layers were deposited from a single In2O3–10 wt %ZnO ceramic target using dc magnetron sputtering onto an unheated substrate. The carrier densities in the channel (2.1×1017/cm3) and source/drain regions (3.3×1020/cm3) were adjusted by changing the reactive oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with saturation mobility of 20 cm2/V s and on/off current ratio of 108.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 6 )

Date of Publication:

Aug 2006

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