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Raman spectroscopy of sputtered AlN films: E2(high) biaxial strain dependence

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4 Author(s)
Trodahl, H.J. ; Laboratoire de Céramique, École Polytechnique Fédéral de Lausanne, 1015 Lausanne, Switzerland and MacDiarmid Institute, Victoria University of Wellington, 6015 Wellington, New Zealand ; Martin, F. ; Muralt, P. ; Setter, N.

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Sputtered [0001] AlN films with directly measured biaxial strain have been investigated by Raman spectroscopy to determine the strain dependence of the zone-center mode frequencies. The E2(high) feature near 655 cm-1 is found to vary linearly with stress, and we determine the strain derivative of the line as -2.9±0.3 cm-1/GPa, confirming the lowest previously reported derivative and a factor of 2 smaller than the largest. The result is 13% larger than has been predicted by ab initio calculations. The other zone-center lines accessible under normally incident geometry from a c-axis film are shown to be unsuitable as strain gauges.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 6 )

Date of Publication:

Aug 2006

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