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On the tunnel injection of excitons and free carriers from In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well to InAs/In0.53Ga0.23Al0.24As quantum dashes

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6 Author(s)
Podemski, P. ; Institute of Physics, Wrocław University of Technology, 50-370 Wrocław, Poland ; Kudrawiec, R. ; Misiewicz, J. ; Somers, A.
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The authors investigate the efficiency of exciton and free carrier injections from quantum well (QW) to quantum dashes (QDashes) in tunnel-injection structures composed of In0.53Ga0.47As/In0.53Ga0.23Al0.24As QW and InAs/In0.53Ga0.23Al0.24As QDashes with ground state transitions separated by the energy close to the energy of LO phonon. As far as the thermal energy is smaller than the binding energy of QW excitons, almost all of the carriers created in QW tunnel to QDash. The injection process is much less efficient for free carriers because the energy difference between energy levels in QW and QDashes is not favorable for tunneling of electrons and holes separately.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 6 )