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Prestrained effect on the emission properties of InGaN/GaN quantum-well structures

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7 Author(s)
Chi-Feng Huang ; Graduate Institute of Electro-Optical Engineering, National Taiwan University, No. 1, Roosevelt Road, Section 4, Taipei, Taiwan 10617, Republic of China and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Road, Section 4, Taipei, Taiwan 10617, Republic of China ; Tang, Tsung-Yi ; Jeng-Jie Huang ; Shiao, Wen-Yu
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The authors demonstrate the spectral redshift of the quantum wells (QWs) designated for green emission into the orange range in a light-emitting diode by adding a violet-emitting QW at the bottom in metal-organic chemical vapor deposition. An electroluminescence redshift of 53 nm was obtained. The cathodoluminescence spectra indicated that the long-wavelength QWs close to the violet one were strongly influenced by this added QW and mainly emitted the orange photons. Those near the top were less affected. This influence is supposed to originate from the prestrained effect in the barrier layer right above the violet QW. Such a prestrained effect is expected to be more effective when the underlying QW is well shaped and the heterojunction strain is strong, like the case of the violet QW. This effect is weak between the high-indium QWs, in which the formation of indium-rich clusters releases the strain.

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Applied Physics Letters  (Volume:89 ,  Issue: 5 )