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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:5 Help

Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies

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8 Author(s)
Teisseyre, H. ; UNIPRESS, High Pressure Research Center, PAS, il. Sokolowska 29/37 01–142 Warsaw, Poland ; Suski, T. ; Łepkowski, S.P. ; Perlin, P.
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The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dEE/dP] shows a negative value, in contrast with the positive pressure coefficient of the GaN band gap. We also observed that increasing pressure leads to a significant decrease of the light emission intensity and an asymmetric broadening of the PL band. All these effects are related to the pressure-induced increase of the built-in electric field. A comparison is made between experimental results and the proposed theoretical model which describes the pressure behavior of nitride QDs.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 5 )

Date of Publication: Jul 2006

Page(s):
051902 - 051902-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2219381
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2006

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