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Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition

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7 Author(s)
Peralvarez, M. ; EME, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain ; Garcia, C. ; Lopez, M. ; Garrido, B.
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Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact ∼250 nm thick and a silicon-rich silicon oxide layer of about 40 nm deposited on a p-type Si substrate by plasma-enhanced chemical vapor deposition. The electroluminescence is optimized for a Si excess of 17% and annealing at 1250 °C for 1 h in nitrogen-rich atmosphere. The pulsed emission presents typical decay times of ∼5 μs and external quantum efficiencies of ∼0.03%.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 5 )

Date of Publication:

Jul 2006

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