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Quantitative microscopy of nonlinear dielectric constant using a scanning evanescent microwave microscopy

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5 Author(s)
Hu, Bo ; National Synchrotron Radiation Laboratory and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China ; Liu, Wenhan ; Gao, Chen ; Zhu, Xiaohong
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2234746 

Quantitative characterization of dielectric nonlinearity in ferroelectric materials has been successfully performed using a scanning evanescent microwave microscope, and a key calibration coefficient for quantitative microscopy of nonlinear dielectric constant is derived. This unique technique has advantages of high spatial resolution and simultaneously accessing of other related properties such as dielectric constant and magnetoelectric coefficient. Samples of LiNbO3 single crystal and PbTiO3 thin film are measured, which demonstrates that this technique can access the nonlinear dielectric constant of a microregion with a sensitivity of 1.0×10-21 F/V.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 4 )

Date of Publication: Jul 2006

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