Referenced Items are not available for this document.
A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of ~95 A/W in the MODFET mode which is ~6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer
Published in:
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Date of Conference: 7-9 Aug 1995
- Page(s):
- 219 - 228
- Meeting Date :
- 07 Aug 1995-09 Aug 1995
- ISSN :
- 1079-4700
- Print ISBN:
- 0-7803-3970-3
- INSPEC Accession Number:
- 5205632
- Conference Location :
- Ithaca, NY
- Digital Object Identifier :
- 10.1109/CORNEL.1995.482438
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
