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A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs

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5 Author(s)
Subramanian, S. ; Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA ; Schulte, D. ; Ungler, L. ; Plant, T.K.
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A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of ~95 A/W in the MODFET mode which is ~6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer

Published in:

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Date of Conference:

7-9 Aug 1995