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Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

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6 Author(s)
Chakraborty, Arpan ; Electrical and Computer Engineering and Materials Departments, College of Engineering, University of California, Santa Barbara, California 93106 ; Kim, K.C. ; Wu, F. ; Speck, J.S.
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We report on the use of in-situ SiNx nanomask for defect reduction in nonpolar a-plane GaN films, grown by metal-organic chemical vapor deposition. High-resolution x-ray diffraction analysis revealed that there was a monotonic reduction in the full width at half maximum, both on-axis and off-axis, with the increase in the SiNx thickness. Atomic force microscopy images revealed a significant decrease in the root-mean-square roughness and the density of submicron pits. Cross-section and plan-view transmission electron microscopy on the samples showed that the stacking fault density decreased from 8×105 to 3×105 cm-1 and threading dislocation density decreased from 8×1010 to 9×109 cm-2. Room temperature photoluminescence measurement revealed that the band-edge emission intensity increased with the insertion of the SiNx layer, which suggests reduction in the nonradiative recombination centers.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 4 )

Date of Publication:

Jul 2006

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