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Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes

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8 Author(s)
Wunderer, T. ; Optoelectronics Department, University of Ulm, 89069 Ulm, Germany ; Bruckner, Peter ; Neubert, B. ; Scholz, Ferdinand
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The authors demonstrate the fabrication and evaluation of bright semipolar GaInN/GaN blue light emitting diodes (LEDs). The structures are realized by growing five GaInN/GaN quantum wells on the {1101} side facets of selectively grown n-GaN stripes with triangular shape running along the <1120> direction covered with a Mg-doped GaN top layer. The growth was done by metal organic vapor phase epitaxy using a conventional [0001] sapphire substrate. The devices have circular mesa structures with diameters between 70 and 140 μm. Continuous wave on-wafer optical output powers as high as 700 μW and 3 mW could be achieved under dc conditions for 20 and 110 mA, respectively. The current dependent blueshift of the peak emission wavelength caused by screening effects of the piezoelectric field was only 1.5 nm for currents between 1 and 50 mA. This is less than half the value measured on c-plane LEDs and confirms the reduced piezoelectric field in our LED structures.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 4 )

Date of Publication:

Jul 2006

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