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Ultrafast-laser-induced parallel phase-change nanolithography

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8 Author(s)
Lin, Y. ; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Engineering Drive 3, Singapore 117576, Singapore; and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608, Singapore ; Hong, M.H. ; Chong, T.C. ; Lim, C.S.
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A phase-change nanolithography technique is developed to fabricate up to millions of two-/three-dimensional nanostructures (∼50 nm) over a large area at a high speed by combining femtosecond laser, microlens array, and wet etching process. Near-field scanning optical microscopy, electrical force microscopy, and atomic force microscopy were used to characterize optical and electrical properties of crystalline and amorphous states, respectively. Different reactions of both amorphous and crystalline areas in phase-change film to alkaline solution are demonstrated. Multiphoton absorption and ultrashort pulse contribute to nanostructure generation. This method opens up a route for nanodevice fabrication with phase-change material.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 4 )

Date of Publication:

Jul 2006

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