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Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method

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3 Author(s)
Ohata, A. ; IMEP, Minatec-INPG, 3 Parvis Louis Néel, BP 257, Grenoble 38016, France ; Cristoloveanu, S. ; Casse, Mikael

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2222255 

The mobilities of the front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors with a thin (2 nm) gate oxide were compared. From front-gate split capacitance-voltage measurements, it was confirmed that the effective mobility of the front channel is lower than that of the back channel. A detailed analysis shows that this lowering strongly depends on the electron density, suggesting the presence of additional Coulomb scattering centers at the front channel.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 3 )

Date of Publication:

Jul 2006

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