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Strain relaxation in buried SrRuO3 layer in (Ca1-xSrx)(Zr1-xRux)O3/SrRuO3/SrTiO3 system

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3 Author(s)
Kim, Hyeong Joon ; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 ; Wang, Yudi ; Chen, I-Wei

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A novel relaxation phenomenon occurs in buried SrRuO3 layers in strained (Ca1-xSrx)(Zr1-xRux)O3/SrRuO3/SrTiO3 (001) thin film system. The lightly strained SrRuO3 buried layer is initially clamped by the SrTiO3 substrate. After a heavily strained (Ca1-xSrx)(Zr1-xRux)O3 overlayer is deposited, localized strain relaxation develops in the buried layer. This is manifested by a crosshatch pattern of <100> corrugations on the surface, due to the slip of <110> {110} threading dislocations. The phenomenon can be controlled by tuning the growth kinetics and strain energy of the overlayer.

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Applied Physics Letters  (Volume:89 ,  Issue: 3 )