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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:26 Help

Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1-xAs-based p-i-n semiconductor nanostructure

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4 Author(s)
Tsen, K.T. ; Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 ; Kiang, Juliann G. ; Ferry, D.K. ; Morkoc, H.

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Electron transient transport in an InxGa1-xAs-based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 26 )

Date of Publication: Dec 2006

Page(s):
262101 - 262101-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2420782
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2006

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