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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:26 Help

Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique

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4 Author(s)
Kawasaki, Koji ; Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokahama 226-8502, Japan ; Koike, Choshiro ; Aoyagi, Yoshinobu ; Takeuchi, Misaichi
 nm was fabfricated by the laser lift-off technique. The emission area extende..."/>

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A vertical AlGaN deep ultraviolet (DUV) light emitting diode (LED) emitting at 322 nm was fabfricated by the laser lift-off technique. The emission area extended to the entire electrode uniformly, and the current crowding was suppressed effectively in the devices. As a result, the differential conductance of the vertical LED was improved by a factor of 5 and the operation voltage was reduced to half, compared to that of the lateral LED. The self-heating effect was effectively suppressed even at high-current-density operation. The vertical structure in the high resistive AlGaN LED has potential application in high-power AlGaN DUV devices.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 26 )

Date of Publication: Dec 2006

Page(s):
261114 - 261114-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2424668
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2006

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