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Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection

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5 Author(s)
Salfi, J. ; Centre for Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E4, Canada ; Philipose, U. ; de Sousa, C.F. ; Aouba, S.
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Multilayer Ti/Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80 nm nominal diameter. Four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ti/Au contacts is 0.024 Ω cm2 and intrinsic resistivity of the nanowires is approximately 1 Ω cm. The authors have also measured the spectral photocurrent responsivity of a ZnSe nanowire with 2.0 V bias across Ti/Au electrodes, which exhibits a turnon for wavelengths shorter than 470 nm and reaches 22 A/W for optical excitation at 400 nm.

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Applied Physics Letters  (Volume:89 ,  Issue: 26 )