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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

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13 Author(s)
Tauk, R. ; GES, UMR 5650 CNRS-Universite Montpellier 2, 34090 Montpellier, France ; Teppe, F. ; Boubanga, S. ; Coquillat, D.
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Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120–300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (≤200 V/W) and noise equivalent power (≥10-10 W/Hz0.5) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )

Date of Publication:

Dec 2006

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