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Organic-transistor-based flexible pressure sensors using ink-jet-printed electrodes and gate dielectric layers

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3 Author(s)
Noguchi, Y. ; Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan ; Sekitani, T. ; Someya, T.

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The authors have fabricated 33 cm diagonal flexible pressure sensors using organic field-effect transistor (FET) active matrices. Polyimide precursors and silver nanoparticles are patterned on a polyimide film by using an ink-jet printing system and cured at 180 °C to form gate dielectric layers and electrodes for organic FETs, respectively. In order to define the device dimensions, epoxy partitions are prepared by a screen printing system. The mobility of the transistors is 0.7 cm2/V s and the on/off ratio exceeds 106. Spatial distributions of pressure are read out by an organic FET active matrix.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )

Date of Publication:

Dec 2006

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