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Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

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9 Author(s)
Rowe, M.A. ; Optoelectronics Division, National Institute of Standards and Technology, Boulder, Colorado 80305 ; Gansen, E.J. ; Greene, M. ; Hadfield, R.H.
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We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to (68±18)% at 4 K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of (53±11)% and dark counts of 0.003 counts per shot.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )

Date of Publication:

Dec 2006

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