(00l) epitaxial AgTaO3 and AgNbO3 thin films were prepared on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTaO3 and 550±55 and 0.020±0.005 for AgNbO3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTaO3 and ≤3.6% for AgNbO3. The tunability of the AgTaO3 film was 1.6% at 230 kV/cm field, while 21% tunability was measured for AgNbO3 at 190 kV/cm.