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(00l) epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

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4 Author(s)
Telli, M.B. ; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 and Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Bharadwaja, S.S.N. ; Biegalski, M.D. ; Trolier-McKinstry, S.

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(00l) epitaxial AgTaO3 and AgNbO3 thin films were prepared on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTaO3 and 550±55 and 0.020±0.005 for AgNbO3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTaO3 and ≤3.6% for AgNbO3. The tunability of the AgTaO3 film was 1.6% at 230 kV/cm field, while 21% tunability was measured for AgNbO3 at 190 kV/cm.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )