By Topic

(00l) epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Telli, M.B. ; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 and Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Bharadwaja, S.S.N. ; Biegalski, M.D. ; Trolier-McKinstry, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2403918 

(00l) epitaxial AgTaO3 and AgNbO3 thin films were prepared on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTaO3 and 550±55 and 0.020±0.005 for AgNbO3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTaO3 and ≤3.6% for AgNbO3. The tunability of the AgTaO3 film was 1.6% at 230 kV/cm field, while 21% tunability was measured for AgNbO3 at 190 kV/cm.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )