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175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

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4 Author(s)
Tezuka, N. ; Department of Materials Science, Graduate School of Engineering, Tohoku University, Aobayama 6-6-02, Sendai 980-8579, Japan and CREST-JST, Saitama 332-0012, Japan ; Ikeda, N. ; Sugimoto, S. ; Inomata, K.

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The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L21-Co2FeAl0.5Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO=1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 °C and then decrease by annealing, while for tMgO=2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 °C. The TMR ratio up to 175% at RT and thermal stability up to 500 °C have been achieved for tMgO=2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2FeAl0.5Si0.5 with L21 structure.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )