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Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

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9 Author(s)
Te-Chung Wang ; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, ROC ; Tien-Chang Lu ; Ko, Tsung-Shine ; Hao-Chung Kuo
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The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on trenched a-plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3×107 cm-2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 μm thick.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 25 )

Date of Publication:

Dec 2006

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