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InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface

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5 Author(s)
Park, Eun-Hyun ; School of Electrical and Computer Engineering, Georgia Institute of Technology, 778 Atlantic Drive, Bunger Henry Bldg., Rm No. 195, Atlanta, Georgia 30332-0250 ; Ferguson, Ian T. ; Jeon, Soo-Kun ; Park, Joong-Seo
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To increase the light extraction efficiency, high density truncated hexagonal pyramid shaped submicron p-GaN hillocks were formed on the emission surface of an InGaN/GaN multiple quantum well light emitting dicode (LED) using an in situ silicon carbon nitride self-masking layer. The self-assembled hillock density was raised up to a low 109 cm-2 using several nanometers of a Si0.4C0.6N1 self-masking layer. The self-assembled hillock LED resulted in the optical power improvement up to 80% with similar electrical properties as a normal LED. This device showed a higher electrostatic discharge pass yield at over 1000 V reverse stress voltage.

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Applied Physics Letters  (Volume:89 ,  Issue: 25 )