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Fe3-xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor

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13 Author(s)
Takaobushi, Junichi ; The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan ; Tanaka, Hidekazu ; Kawai, T. ; Ueda, Shigenori
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Epitaxial ferri(ferro)magnetic Fe3-xZnxO4 thin films (x=0–0.9) were prepared using a pulsed-laser deposition technique. The electrical conductivity and magnetic properties of Fe3-xZnxO4 thin film were systematically modulated for the entire range of Zn substitution. Anomalous Hall coefficient measurements revealed the presence of spin-polarized carriers at room temperature. Valence band spectra obtained by hard x-ray photoemission spectroscopy revealed that the density of states near the Fermi level was reduced with an increasing Zn concentration of x. These results indicate that this system will serve as a tunable ferromagnetic semiconductor with a strong electron correlation.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 24 )

Date of Publication:

Dec 2006

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