Contactless electroreflectance was measured at room temperature to characterize a wide range of the possible optical transitions in ZnxCd1-xSe/Znx′Cdy′Mg1-x′-y′Se multi-quantum-well structures grown by molecular beam epitaxy. Based on these measurements, the authors predict and then verify the anticipated intersubband transition energies. They investigate a representative Zn0.5Cd0.5Se/Zn0.20Cd0.19Mg0.61Se structure, for which the E1-E2 transition energy is predicted to be 178 meV (6.97 μm). Intersubband absorption using Fourier transform infrared spectroscopy exhibits a peak at 180 meV (6.89 μm), in excellent agreement with the contactless electroreflectance measurements.
Published in:
Applied Physics Letters
(Volume:89
,
Issue:
24
)
Date of Publication:
Dec 2006
- Page(s):
-
241921
-
241921-3
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.2405385
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Dec 2006