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Optical characterization of intersubband transitions in ZnxCd1-xSe/ZnxCdyMg1-x-ySe multiple quantum well structures by contactless electroreflectance

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Contactless electroreflectance was measured at room temperature to characterize a wide range of the possible optical transitions in ZnxCd1-xSe/ZnxCdyMg1-x-ySe multi-quantum-well structures grown by molecular beam epitaxy. Based on these measurements, the authors predict and then verify the anticipated intersubband transition energies. They investigate a representative Zn0.5Cd0.5Se/Zn0.20Cd0.19Mg0.61Se structure, for which the E1-E2 transition energy is predicted to be 178 meV (6.97 μm). Intersubband absorption using Fourier transform infrared spectroscopy exhibits a peak at 180 meV (6.89 μm), in excellent agreement with the contactless electroreflectance measurements.

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Applied Physics Letters  (Volume:89 ,  Issue: 24 )