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Growth and thermal stability of GaPO4 epitaxial thin films

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3 Author(s)
Pedarnig, J.D. ; Angewandte Physik, Johannes-Kepler-Universität Linz, A-4040 Linz, Austria ; Roither, S. ; Peruzzi, M.

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Thin epitaxial films of gallium orthophosphate (GaPO4) are grown on α-quartz (SiO2) substrates. Here, amorphous stoichiometric precursor layers fabricated by pulsed-laser deposition on (001) SiO2 substrates are transformed to crystalline GaPO4 by postannealing in air at 650–950 °C. Epitaxial films with thicknesses up to 300 nm exhibit strong in-plane and out-of-plane textures (angular widths ≪0.6°). Long-term annealing in air at temperatures above the α- to β-phase transition of the quartz substrate (573 °C) does not degrade the films.

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Applied Physics Letters  (Volume:89 ,  Issue: 24 )