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Defect and stress characterization of AlN films by Raman spectroscopy

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2 Author(s)
Lughi, Vanni ; Materials Department, College of Engineering, University of California at Santa Barbara, California 93160-5050 ; Clarke, David R.

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Raman spectroscopy was used to characterize the residual stress and defect density of AlN thin films reactively sputtered on silicon (100). The authors studied the correlation between the shift of the E2 (high) phonon of AlN at 658 cm-1 and the film biaxial stress and obtained a biaxial piezospectroscopic coefficient of 3.7 GPa/cm-1. A correlation was found between the width of the Raman line, the oxygen concentration measured by secondary ion mass spectroscopy, and acoustic losses. This work lays the basis for the nondestructive assessment of two key thin film properties in microelectromechanical systems applications, namely, acoustic attenuation and residual stress.

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Applied Physics Letters  (Volume:89 ,  Issue: 24 )