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Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films

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5 Author(s)
Bian, Liu-Fang ; State Key Laboratory for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; Zhang, C.G. ; Chen, W.D. ; Hsu, C.C.
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The local environment of Er3+ in heavily Er-doped (Er, 2.5 at. %) Si nanoclusters embedded in SiO2 films annealed at various temperatures was investigated by using the fluorescence-extended x-ray absorption fine structure spectroscopy. The results show that annealing caused a large effect on the local environment of Er3+ surrounded by O atoms and the 1.54 μm photoluminescence intensity. The correlation between the local environment around Er3+ and the corresponding 1.54 μm photoluminescence was discussed.

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Applied Physics Letters  (Volume:89 ,  Issue: 23 )