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Thermal stability of Pr silicate high-k layers on Si(001)

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5 Author(s)
Lupina, G. ; IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany ; Schroeder, T. ; Wenger, Ch. ; Dabrowski, J.
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Thermal stability of amorphous Pr silicate high-k layers on Si(001) was evaluated in view of complementary metal-oxide-semiconductor transistor processing requirements. Materials science techniques prove that no crystallization, no phase separation into SiO2 and Pr2O3, and no Pr silicide formation at the interface occur after 1 min rapid thermal annealing treatment in N2 over the temperature range from 600 to 900 °C. Electrical measurements confirm within this thermal budget well-behaved characteristics with k values between 11 and 13 and leakage currents about three orders of magnitude lower than in case of SiON reference layers.

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Applied Physics Letters  (Volume:89 ,  Issue: 22 )