By Topic

High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Anthopoulos, Thomas D. ; Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom ; Singh, Birendra ; Marjanovic, Nenad ; Sariciftci, Niyazi S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2387892 

We report on organic n-channel field-effect transistors and circuits based on C60 films grown by hot wall epitaxy. Electron mobility is found to be dependent strongly on the substrate temperature during film growth and on the type of the gate dielectric employed. Top-contact transistors employing LiF/Al electrodes and a polymer dielectric exhibit maximum electron mobility of 6 cm2/V s. When the same films are employed in bottom-contact transistors, using SiO2 as gate dielectric, mobility is reduced to 0.2 cm2/V s. By integrating several transistors we are able to fabricate high performance unipolar (n-channel) ring oscillators with stage delay of 2.3 μs.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 21 )