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Spatially resolved thickness analysis of microscale structures using micro-Raman spectroscopy

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4 Author(s)
Xiaoming Wu ; Institute of Microelectronics, Tsinghua University, Beijing 100084, China ; Tianling Ren ; Liu, Litian ; Yu, Jianyuan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2396908 

A novel method, by using micro-Raman spectroscopy, is developed to measure the thickness of microelectromechanical system structures with high spatial resolution. When a microscale structure is heated by a laser, the temperature rise of the structure depends on the structure thickness and material properties. Therefore, the structure thickness can be measured using Raman shift, which is a function of temperature. Micro-Raman spectrometer is capable of measuring the thickness distribution of microscale structures with micron spatial resolution. This technique is evaluated by characterizing the thickness distribution of a single-crystal silicon (c-Si) membrane. The measured thickness distributions are verified by scanning electron microscope measurement.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 21 )

Date of Publication:

Nov 2006

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