Realization of high hole concentrations in Mg doped semipolar (1011) GaN

The authors report on the growth of Mg doped semipolar (1011) GaN layers on vicinal (100) MgAl₂O₄ substrates miscut in the <011> direction by metal-organic chemical vapor deposition. A maximum hole concentration of 2.4×10¹⁸ cm^-3 and a maximum mobility of 8 cm² V^-1 s^-1, respectively, were achieved following a postgrowth thermal annealing step. Although the hole concentration decreased for Mg concentrations greater than 3.3×10¹⁹ cm^-3, significant hole concentrations, combined with the reduction in internal polarization fields, make semipolar GaN layers suitable for the fabrication of high brightness optoelectronic devices.