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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:20 Help

p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering

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5 Author(s)
Wang, Peng ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China ; Chen, NuoFu ; Yin, Zhigang ; Dai, Ruixuan
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Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05≤x≤0.13) was confirmed by Hall measurements, revealing a hole concentration of 1015–1016 cm-3 and a mobility of 0.6–4.5 cm2/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 20 )

Date of Publication: Nov 2006

Page(s):
202102 - 202102-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2388254
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2006

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