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Effect of the oxidation process on the electrical characteristics of 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors

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4 Author(s)
Okamoto, Mitsuo ; Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Tanaka, Mieko ; Yatsuo, T. ; Fukuda, K.

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We fabricated inversion-type 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The electrical properties of the p-channel MOSFETs depended on the gate oxidation process. We found that wet oxidation process was effective for improving the channel mobility of the p-channel MOSFET, and obtained the field-effect channel mobility μFE of 15.6 cm2/V s by using that process. Measurements of the p-type MOS capacitors implied that the SiO2/SiC interface states around the valence band affected the channel mobility and threshold voltage of the p-channel MOSFETs. We also investigated temperature dependences.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 2 )