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Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

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5 Author(s)
Senzaki, J. ; Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Kojima, K. ; Kato, Tomohisa ; Shimozato, Atsushi
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The correlation between thermal oxide reliability and dislocations in n-type 4H-SiC (0001) epitaxial wafers has been investigated. The thermal oxides were grown by dry oxidation at 1200 °C followed by nitrogen postoxidation annealing. Charge-to-breakdown values of thermal oxides decrease with an increase in the number of the dislocations in a gate-oxide-forming area. Two types of dielectric breakdown modes, edge breakdown and dislocation-related breakdown, were confirmed by Nomarski microscopy. In addition, it is revealed that basal plane dislocation is the most common cause of the dislocation-related breakdown mode.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 2 )

Date of Publication:

Jul 2006

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