Cart (Loading....) | Create Account
Close category search window

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Senzaki, J. ; Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Kojima, K. ; Kato, Tomohisa ; Shimozato, Atsushi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The correlation between thermal oxide reliability and dislocations in n-type 4H-SiC (0001) epitaxial wafers has been investigated. The thermal oxides were grown by dry oxidation at 1200 °C followed by nitrogen postoxidation annealing. Charge-to-breakdown values of thermal oxides decrease with an increase in the number of the dislocations in a gate-oxide-forming area. Two types of dielectric breakdown modes, edge breakdown and dislocation-related breakdown, were confirmed by Nomarski microscopy. In addition, it is revealed that basal plane dislocation is the most common cause of the dislocation-related breakdown mode.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 2 )

Date of Publication:

Jul 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.