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Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaN/GaN high-electron-mobility transistors on 4 in. silicon

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2 Author(s)
Selvaraj, S.L. ; Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan ; Egawa, T.

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AlGaN/GaN high-electron-mobility transistors (HEMTs) on 4 in. Si were fabricated by inserting 3 nm of Al metal as a gate prior to the deposition of Pd/Ti/Au. The increase of drain current (IDS max) density and decrease of extrinsic transconductance (gm max) have been observed in the Al-gated AlGaN/GaN HEMTs. The increase of ID max is due to the increase of two-dimensional electron gas sheet carrier density, which was confirmed by capacitance-voltage (C-V) measurements. Moreover, the Al layer inserted-gate HEMT exhibited negative threshold voltage (Vth) shift. The Al and AlGaN interface shows Al-based oxide layer which was confirmed by Auger electron spectrum and x-ray photoelectron spectrum.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 19 )

Date of Publication:

Nov 2006

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