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Epitaxial ScAlMgO4(0001) films grown on sapphire substrates by flux-mediated epitaxy

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8 Author(s)
Obata, T. ; Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ; Takahashi, R. ; Ohkubo, I. ; Oshima, M.
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ScAlMgO4(0001) epitaxial films have been synthesized on sapphire (0001) substrates by flux-mediated epitaxy. The key points were high temperature deposition and the use of additive BiOx, which was simultaneously supplied during the deposition; otherwise the growth of spinel phase such as MgAl2O4 was dominant. The BiOx is thus considered to promote the growth of ScAlMgO4 like a flux. This result indicates that the flux-mediated epitaxy is a promising way to high quality single crystal ScAlMgO4 films as a lattice-matched substrate for p-type ZnO and GaN films.

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Applied Physics Letters  (Volume:89 ,  Issue: 19 )