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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:17 Help

Intrinsic transport and contact resistance effect in C60 field-effect transistors

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9 Author(s)
Matsuoka, Yukitaka ; School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan and CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan ; Uno, Koichi ; Takahashi, Nobuya ; Maeda, Akira
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2372596 

The autors report size dependence of characteristics of C60 field-effect transistors (FETs). The transport properties of the channel and the contact resistance between the channel and electrodes are extracted from size dependence. Contact resistances are comparable to those of channel resistances, and the gate voltage dependence of contact resistance is greater than that of channel resistance even at linear region. Results show that the Schottky barriers between the channel and the electrodes still affect device characteristics in the on state of C60 FETs.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 17 )

Date of Publication: Oct 2006

Page(s):
173510 - 173510-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2372596
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2006

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