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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:17 Help

Silicon single electron transistors aiming at a high gate modulation factor

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6 Author(s)
Chen, Jiezhi ; Department of Physics, Nanjing University, Nanjing 210093, China and Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China ; Shi, Yi ; Lin Pu ; Zheng, Youdou
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2370874 

The authors report on the fabrication of a Si-based single electron transistor (SET), in which the gate is formed just on the top of quantum dots (QDs). By this kind of structure, the gate modulation factor can be modulated to be high, which provides a promising approach to improve the voltage gain. It is demonstrated that the gate modulation factor achieves 0.84 in the fabricated SET device with sub-10-nm QD at room temperature. The transport characteristics with Coulomb blockade oscillations and negative differential conductance are discussed.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 17 )

Date of Publication: Oct 2006

Page(s):
173135 - 173135-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2370874
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2006

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