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Morphology and lattice coherency in GaAs nanocrystals grown on Si(100) surface

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3 Author(s)
Usui, Hiroyuki ; Venture Business Laboratory, Kobe University, Nada, Kobe 657-8501, Japan ; Yasuda, Hidehiro ; Mori, Hirotaro

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Morphology and structure in GaAs nanocrystals grown on Si(100) substrate were studied to investigate the relation between lattice coherency and growth mechanism. GaAs nanocrystals formed (100) and {111} facets, and rectangular base with four sides along [011] and [011] directions. Either the (011) or the (011) lattice planes along the minor axis of the rectangular base are completely coherent with those in Si substrate. When either the (011) or the (011) lattice planes become partially coherent to relax the lattice strain, the growth rate along the direction parallel to the unstrained (011) or (011) planes which prevents each area of the strained (011) or (011) planes from increasing remarkably increases.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 17 )