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Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals

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5 Author(s)
Hyunsuk Kim ; Department of Electrical Engineering, Korea University, Seoul 136-701, Korea and Institute for Nano Science, Korea University, Seoul 136-701, Korea ; Kyoungah Cho ; Kim, Dong-Won ; Lee, Hye-Ryoung
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Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The SiO2 bottom- and Al2O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2/V s, respectively. The operating gate voltages for the top-gate transistor with an Al2O3 dielectric layer are actually lower, compared with the SiO2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 17 )

Date of Publication:

Oct 2006

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